Index
Note: Page numbers followed by f indicate figures and t indicate tables.
A
ALD See Atomic layer deposition (ALD)
Amorphous microwires 225
Co-rich microwires 229
demagnetizing factor 231
GMI effect 231–248
industrial sectors 227
internal stresses 228–229
magnetic anisotropy field 228–229
magnetic bistability 229
magnetoimpedance (MI) effect 532–535
magnetostrictive microwires See (Magnetostrictive microwires, domain walls)
ALD and lithography 18–20
diameter modulation 14–17
direct current (DC) power supply 7
HA See (Hard anodization (HA))
MA See (Mild anodization (MA))
Ni–Co alloy structures 180
sol–gel process 114–115
Asymmetric magnetoimpedance (AMI) 300–301
B
advantages 276
center to surface techniques 277–280
glass-coated microwire precursors 276
hard/soft FePt/FeNi biphase system 287–288
inductive fluxmetric techniques 285
soft/hard CoFe/CoNi biphase system 286–288
soft/soft FeSiBP/FeNi biphase system 288
sputtering and electrodeposition techniques 276
vibrating sample magnetometer 285
advantages 276
center to surface techniques 280–285
data storage applications 302–303
dipolar magnetic bias 302–303
ferromagnetic systems 302–303
magnetic properties of 291–299
spin-valve-like system, development of 302–303
AAO template 594
cell trapping and separation 612–614
cell uptake and cytotoxicity 619–620
chemical groups 599t
conventional organic fluorophore 601–602
decisive factor 599
electrodeposition 594
Fe-oxide nanomaterial 596–598
hyperthermia 614–615
living cells, mechanical stress 615–619
M–O–P bonds 599–601
multisegmented nanowires 594–595
nano/micromotors 620–621
nanoscale arrays 592–593
1D nanostructure 592–593
organophosphorus compounds 599–601
segmented nanowires 598
surface modification 600f
Tris-HCl buffer 599–601
X-ray diffraction 599–601
basic properties 662–664
crystal lattice 670–671
micromagnetic theory See (Micromagnetic theory)
C
Chemical deposition 748–749
Fe1.3Ge nanowires 184–188
Fe3Si nanowires 189–193
metal halide 173
Ni3Co nanowires 180–184
Ni nanowires 174–180
CIDW See Current-induced domain wall (CIDW)
demagnetization process 51–52
FCC crystal phase 47–48
geometric parameter 52–53
heating effect 150
high currents 150–152
high-resolution transmission electron microscopy 53
low beam currents 153–154
magnetization reversal mechanism 155–156
magnetocrystalline anisotropy 52–53
micromagnetic simulations 50–51
nucleation process 51–52
DC electrodeposition 71–72
high-resolution transmission electron microscopy 70–71
longitudinal hysteresis loops 72f
magnetic behaviors 70
multilayered nanowires 85–87
XRD 70–71
CIDW motion See (Current-induced domain wall (CIDW))
domain patterns 345–346
domain wall velocities 346–348
edge roughness, influence of 350–351
E-field control of 361–364
E-field magnetic devices 360–361
HS and LS substrates 366–368
ion irradiation 364–366
magnetic wires, nanofabrication of 341–344
NV center microscopy 348–350
PVD cluster systems 336
spin Hall torque See (Spin Hall torque)
spin-orbitronics 374–375
structural properties 337–339
Conducting filaments 490–491
chemical properties of 505–506
electrical analysis of 506
ReRAM 489–490
spatial analysis of 507–510
Conductive atomic force microscopy (C-AFM) 494–495
Co–Ni/Cu multilayered nanowires 90–92
Co–Ni nanowires 87–90
crystalline anisotropy constant 62
fabrication and magnetic characterization 55
magnetic anisotropy 59
magnetoelastic anisotropy 62
magneto-optic Kerr effect magnetometry 55–56
magnetothermal and magnetotransport properties 62
Seebeck coefficient 62
Slater-Pauling curve 55–56
temperature dependence 61
Co–Pt nanowires 79–80
Crossbar nanowire memory array 501–503
Oersted fields 351–356
spin-orbit torque 356–359
CVD See Chemical vapor deposition (CVD)
CVT See Chemical vapor transport (CVT)
D
Device under test (DUT) 457–458
Dipolar exchange length 784–785
Direct current (DC) electrodeposition method 730–731
defects, role of 259–264
experimental techniques 210–211
interpretation 218f
Kerr transition 217–218
magnetization switching 255
magnetoelastic anisotropy effects 256–259
manipulation of 264–269
MOKE and Sixtus–Tonks method 217
in thin wires 255–269
velocity and mobility 211–216
E
diameter modulation 14–17
hard anodization 12–13
mild anodization 6–12
AC electrodeposition 26–28
galvanostatic electrodeposition 25
metallic alloys 24
ohmic polarization 23–24
potentiostatic electrodeposition 25
pulsed electrodeposition 25–26
Electroless plating 749
Bloch waves 708
Floquet channels (FAB) 711
FMR, role of 690
L–L formalism 709–710
Maxwell–Garnett formula 710
Maxwell’s equations 708
micromagnetic calculations 709–710
MMIC microwave devices 710–711
nonreciprocal microwave devices 706–708
propagation and diffraction effects 688–689
proximity effects 709
rf magnetization profiles 717–718
self-biased planar microwave circuit 706–708
shape and size effects 712–714
3-D magnetic nanocomposite 711
THz frequencies 714–718
unbiased microwave circulator 706–708
Ethylenediaminetetraacetic acid (EDTA) 740
F
Face-centered cubic (FCC) disorder 278–280
anisotropic magnetic behavior 77
geometric characteristics 78–79
magnetic characterization 76
structural and magnetic characterization 79
thermal annealing 74–75
XRD pattern 74
chains of spheres 69
coercivity and squareness 67f
DC electrodeposition 65
magnetic characterization 67–68
magnetocrystalline anisotropy 65
micromagnetic simulations 68
simulated loops 68–69
FeCoNi nanowires 69–70
Fe nanowires See Iron (Fe) nanowires
Fe-Ni nanowires 62–64
boundary conditions and surface impedance 454–455
exchange-conductivity effects 453–454
linearized LLG equation 451
LLG equation 450–451
local theory of 451
Maxwell equations 451
electric transport properties 459–460
in ferromagnetic metals See (Ferromagnetic metals, FMR)
metallic wires, electric polarization of 455–457
microwave applications 482–483
nonlinear FM, in thin wires See (Nonlinear ferromagnetic resonance)
parallel field configuration See (Parallel configuration (PC))
Suhl spin-wave instabilities 474–476
transversal field configuration See (Transversal configuration (TC))
cross-sectional TEM analyses 190–191
crystal atomic configuration 191–192
lattice parameter 189
SiO2 layer, formation of 193
TEM analyses 192
temperature profile and annealing 192f
thermal diffusion 192
vapor–solid growth mechanism 192
Field-assisted dissolution (FAD) 8–9
Field modulation technique 457–458
First-order magneto-structural transition (FOMT) 570
Flash memory 489
FMR See Ferromagnetic resonance (FMR)
cobalt See (Cobalt (Co) nanowires)
domain walls, in planar nanowires 157–165
GIS 148
scanning electron microscope 148
suspended nanowires 165–167
electrodeposition of 81
shape anisotropy 83
G
Galvanostatic electrodeposition 25
Giant magnetocaloric effect (GMCE) 569–570
AC impedance 232–233
annealing effects 246f
Co-rich microwires 233
giant magnetoimpedance effect 239f
gigahertz frequencies 235
industrial application 233
internal stresses 237–238
Joule heat treatment 242
partial crystallization and nanocrystallization 248–254
stress-annealed Fe-rich microwires 247
stress-induced anisotropy 247–248
stress relaxation 242
surface impedance tensor 234
Glass-coated melt spinning method 200
GPMagnet 443
H
Hard anodization (HA) 12–13
AAO membrane 108
anodic aluminum oxide template filling 114–115
composition modulation 112
hard-mild anodization 111–112
nanoimprint and lithographic techniques 108
nanowire synthesis 107–108
oxide-metal interface 108
pore widening and third anodization 110
prepatterned aluminum 108–109
self-ordering 108
sol–gel technique 112–114
synthesis techniques 115–116
TiN thin films 108
Heusler alloys 570–571
Hopkinson maximum 579–580
Hyperthermia 614–615
I
In-rotating-water quenching technique 277–278
disadvantage 44
electrochemical conditions 44–45
electrodeposition 45–46
Fe(III) formation/precipitation 45–46
industrial production of 44–45
longitudinal coercive field 47f
longitudinal hysteresis loops 47f
magnetic anisotropy 46
magnetic devices 44
metallurgy 44
role of 44
saturation magnetization 46
shape anisotropy 46
K
Kirkendall effect 748–749
L
Lambert-Beer law 137–138
Landau–Lifshitz–Bloch (LLB) equation 440–441
Landau–Lifshitz (LL) equation 657–658
Laser interference lithography (LIL) 19–20
Light-emitting diodes (LEDs) 135–137
LLG Micromagnetics Simulator 442
Longitudinal Kerr effect 155–156
M
CoFeB–MgO structures See (CoFeB–MgO structures, domain wall motion)
spin Hall torque See (Spin Hall torque)
amorphous See (Amorphous microwires)
bimagnetic microwires See (Bimagnetic microwires)
composite testing, stress MI for 535–537
domain wall propagation 255–269
dynamic permeability 528–530
effective permeability 530–531
electrophysical properties 526–527
fabrication method 226
magnetocaloric effect (MCE) See (Magnetocaloric effect (MCE))
microwave tunable composites See (Microwave tunable composites)
nanocrystalline soft magnetic materials 225
sensor size 225
Taylor–Ulitovsky method 225–226
Magnetic nanotubes See Nanotubes (NTs)
Au nanoparticle precipitation 607–608
bimagnetic nanowires See (Bimagnetic nanowires)
for biomedical applications See (Biomedicine)
chemical reduction method 596–598
configurational phase transitions 685–688
CVT See (Chemical vapor transport (CVT))
cylindrical NWs, micromagnetic simulation of See (Micromagnetic simulations)
demagnetizing field 589–590
in EM fields See (Electromagnetic waves (EMWs))
hard magnetic segments 606
hybrid nano-magneto-optical devices 589–590
magnetic anisotropy 682
mica films 680–681
nanotubes 589–590
permalloy nanowire sample 680f
permanent magnet fabrication See (Permanent magnet fabrication)
self-assembly 609–612
shape anisotropy 682–684
soft magnetic segments 602–606
static dipolar interaction effects 684–685
static magnetic properties 681–682
submicron wires See (Submicron wires)
template-assisted electrodeposition 593–596
Magnetic shift register 334–335
cylindrical magnetic nanowires 423–424
nanotubes (NTs) 751–760
single domain wall, nucleation and depinning of 379–382
VSM hysteresis loops 382–383
adiabatic demagnetization 570
adiabatic magnetization 569
FOMT 570
GMCE 569–570
Heusler alloys 570–571
Heusler glass-coated microwires See (Heusler glass-coated microwires)
isomagnetic cooling 570
isomagnetic heating 570
cobalt (Co) nanowires 5
Co FCC phase 65
Co–Ni alloys 55
Fe–Co alloys 65
magnetization reversal process 89–90
magnetostatic energy calculation 424
TDW reversal mode 433
3-D metals and alloys 630
amorphous microwires 532–535
sensor applications 525
Magneto-optical Kerr effect (MOKE) 155
fluxmetric method 405
magnetic fields and light distribution in 404
modified Sixtus–Tonks method 418–420
surface vortex structure 415–416
defect wall (DWdef) 392
injected domain walls (DWinj) 392–396
magnetization reversal See (Magnetization reversal)
reverse domain wall (DWrev) 391–392
shape of 396–398
MAGPAR package 442
finite element codes 632
key input parameters 632
Stoner–Wohlfarth model 634–635
analytical calculations 424
applications 423
Bloch-point domain walls 425
coherent reversal 424
coherent rotation, Stoner-Wohlfarth model 424
curling reversal mode 424
electron-assisted deposition 423
fine micromagnetic features 802–803
first-order transitions 796–797
FMR 690
focused beam ion 423
GPMagnet 443
individual NWs and NW arrays, hysteresis loops 437–439
LLB equation 440–441
LLG Micromagnetics Simulator 442
magnetization reversal 423–424
MAGPAR package 442
mean diameter and aspect ratio 636
methods 795–796
micromagnetic model See (Micromagnetism)
MicroMagus 442–443
MNW 704
multilayered Co/Cu/Co NWs 440
nanoporous membranes 423
Nmag 442
OOMMF 441–442
RAM 429
reversal modes of 429–436
second-order transition 797–802
shape magnetic anisotropy 429
spincaloritronics 440–441
Micromagnetic theory 424
definition 655
dipolar interaction 655–657
dynamic equilibrium 654–655
exchange energy 655–657
extensions 659–660
hysteresis 658–659
LL equation 657–658
LLG equation 655
magnetization dynamics 657–658
magnetocrystalline anisotropy energy 655–657
metastability 658–659
soft magnetic nanowires 660–662
validity limits 659–660
vector field 654–655
zeeman energy 655–657
Bloch point 670–671
constant magnetization length 426
energy minimization 426
ferromagnetic element, total energy of 426
Gilbert equation 426
inhomogeneities 664–666
Landau–Lifshitz–Gilbert equation 427
MicroMagus 442–443
effective permittivity 538–540
fibre-matrix bond strength 541
fibre-reinforced plastic composites 537–538
integrated sensors arrays 537–538
sensing applications 541
stress transfer mechanisms 541
structural health monitoring 537–538
tensile stress, application of 540–541
time gating 540
tunable permittivity 537–538
wire metamaterials 538
AC and pulsed deposition techniques 12
alumina BL 11–12
anodic conditions 9–10
anodic current density 7
chemical reaction 7
conditions and morphological features 10t
DC electrodeposition techniques 11–12
FIP 9
formation mechanisms 8–9
nanoporous alumina films 7–8
pore formation 8f
pore self-organization 10f
Modified small-angle magnetization rotation (MSAMR) technique 300
Moore’s law 440–441
multiphase synthesis 118
single-phase synthesis 117–118
Co/Cu nanowires 85–87
Co–Ni/Cu multilayer nanowires 90–92
Co–Ni multisegmented nanowires 87–90
Co/Pt multilayer nanowires 92
N
angular dependence of coercivity 753–755
applications of 761–763
applied rotating electric field 745
chemical deposition 748–749
deposition current densities, tuning of 737–738
DW movement 756–760
electroless plating 749
electrolyte solution, influence of 734–735
empty inner core 727
hydrogen bubble formation 740–742
hydrothermal growth 728
magnetic behaviors 727
magnetic DWs 751–753
magnetic hysteresis loops 750–751
nanochannel membranes 746
nanolithography 728
pore fabrication process 728
pore walls, functionalization of 735–736
pulsed potential 738–739
sol–gel process 747–748
surface-to volume ratio 727
temperature-dependent magnetic properties 760–761
template assisted methods 728
thermal treatments 749
working electrode 733–734
working electrode thickness 743
actual packing density 645
packing density 639–640
polymer dispersion 641
self-assembly 641
structural characterizations 643–645
axial heterostructures 128–131
geometry of 125
nanowire arrays 134–135
optoelectronic applications 135–140
planar geometries 125–126
radial heterostructures 131–134
spintronic applications 140–141
Nickel (Ni) nanowires 53–55
epitaxial growth 177–178
fast Fourier transform patterns 175–177
high-resolution TEM images 175–177
magnetic properties 178–180
Pd nanowires 179f
wet chemical method 174
Ni3Co nanowires 180–184
Nitrogen-vacancy (NV) center microscopy 348–350
in graphene 554–558
spin torque See (Spin torque)
2-D electron gas 547–554
Nonlinear ferromagnetic resonance 482
amorphous microwires, subsidiary absorption in 476–477
fine structure of 477–481
Suhl spin-wave instabilities 474–476
Nonvolatile memory 606–607
CoFeB–MgO structures, DW motion See (CoFeB–MgO structures, domain wall motion)
conventional resistive memory 490f
ferroelectric memory 489–490
flash memory 489
flash NAND memory and hard disks, limitations of 333–334
oxide nanowire based resistive memory See (Oxide nanowire, resistive memory)
peripheral circuits 368–371
phase change memory 489–490
ReRAM/memristor 489–490
single RAM type 334
SRAM 371
storage track memory 334–335
3-D flash memory architecture 489
O
bottom-up approach 783–784
micromagnetic simulations 795–803
phase diagram 788–795
scaling laws 803–806
top down approach 783–784
bottom-up oxide nanowire 518
flexible electronics 519–520
nanowire alignment methods 519
passivation 518
resistive switching See (Resistive switching)
P
experimental results 464–466
theoretical model 460–464
Parallel Finite Element Micromagnetics Package (MAGPAR) 442
anisotropic growth 629
micromagnetic modelling See (Micromagnetic modelling)
polyol method 629–631
Phase change memory 489–490
ATWs 791–793
BPWs 793–795
preliminary discussion 788–790
2-D arrays 702
Physical vapor deposition (PVD) 336
domain wall trapping 164–165
ion irradiation process 159–163
nucleation and propagation fields 158
Polyethylene glycol (PEG) 735
cobalt nanorod synthesis 630–631
experimental process 629–630
nickel and cobalt spherical particles 630
Poynting theorem 454–455
Pseudo transverse wall 786–788
Pulsed electrodeposition 25–26
Pulsed laser deposition (PLD) technique 494
Q
Quasi-static (QS) approximation 468–470
R
Random access memory (RAM) 429
in graphene 554–558
2-D electron gas 547–554
Reactive ion etching (RIE) 342–344
conducting filaments See (Conducting filaments)
crossbar nanowire memory array 501–503
electrical breakdown phenomenon 490–491
nanoscale resistive switching, stability of 510–513
nanowire/electrode contact 518
nanowire/metal interface 518
Runge–Kutta method 389
S
domain walls, length and energy of 805–806
Seebeck effect 559–560
defect wall (DWdef) 392
injected domain walls (DWinj) 392–396
magnetization reversal See (Magnetization reversal)
reverse domain wall (DWrev) 391–392
shape of 396–398
Single vortex 653–654
Sixtus–Tonks technique 256
Solar cells 137–140
Sol–gel technique 747–748
aging 113–114
casting 113
drying 114
gelation 113
mixing 113
sintering 114
Bloch wall 314
current-induced effective field, evaluation of 319–321
domain wall velocity 321–324
magnetic chirality, determination of 324–327
Neel walls 314
1D model, domain walls 314–319
racetrack memory 313
sample preparation and experimental methods 319
spin Hall effect 313–314
Spin manipulation 545
in graphene 554–558
Seebeck and spin Seebeck effects 559–560
spin Nernst effect 559–562
2-D electron gas 547–554
displacement of domain walls 356–359
magnetization switching 356
Spin torque 546
domain wall motion 313–314
1D model, domain walls 314–319
Spintronics 545
Spin-wave (SW) 760
dipolar-exchange SW modes 692–698
dipolar interaction 698–700
ferromagnetic nanowire 700–701
multilayered nanowires and magnetic nanotubes 702–705
spin reorientation transition 691–692
Spin-wave resonances (SWRs) 454
Static random access memory (SRAM) 371
Storage track memory 334–335
Strips 783–784
Structure inversion asymmetry (SIA) 356
components 202–203
domain wall propagation 209–218
FINEMET nanowires 206–207
magnetic behavior 205–209
magnetic bistability 201–202
modulation technique 205
MOKE techniques 202
preparation of 201
SEM image of 200f
window method 203
direct magnetometry 166–167
growth of 165–166
Synchrotrons 423
T
anodic Al2 O3 templates 6–20
electrochemical deposition 21–28
polymeric track-etched membranes 5–6
TiO2 nanotube arrays 21
Seebeck and spin Seebeck effects 559–560
spin Nernst effect 559–562
Three dimensional (3-D) flash memory 489
cobalt nanowires 47–53
Co–Cu nanowires 70–73
Co–Ni nanowires 55–62
Co–Pt nanowires 79–80
FeCoCu nanowires 73–79
Fe–Co nanowires 65–69
FeCoNi nanowires 69–70
Fe nanowires 44–47
Fe–Ni nanowires 62–64
FTM/Pd-based alloys 80–83
nickel nanowires 53–55
experimental results 470–473
theoretical model 467–470
V
Vapour–liquid–solid (VLS) mechanism 494
X
X-ray reflectivity (XRR) 337–339
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